Mitsubishi Ipm Pm200cva060

We hold expertise in exporting, distributing, trading and supplying a wide range of MITSUBISHI IPM PM200CVA060 in Beijing, China to our customers.

Features:
1.A IGBT is a functional integration of Power MOSFET and BJT devicesA in monolithic form
2. IGBTA combines the best attributes of both to achieve optimal deviceA characteristics. Each module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
3. All components and interconnects are isolated from the heat sinking base plate,offering simplified system assembly.

PM200CLA-060
PM200CSA-060
PM200CSD-060
PM200DHA-060
PM200DHA120
PM200DSA-060
PM200DSA-120
PM200DVA120
PM200RLA060
PM20CEA060
PM20CEE060