Silicon Carbide(sic) Wafer

We are leading manufacturer of Silicon Carbide(SiC) Wafer in Beijing, Beijing, China with following details

Description:
A wide energy bandgap, high thermal conductivity, high saturated electron drift velocities, and high break-down electric field make silicon carbide(SiC) a candidate of choice for high-Temperature, high-speed, high frequency, and high-Power applications. SiC based devices are highly expected for the spaceraft, space probe, oil exploration, optical storage, display, and power management and distributions
Main parameters:
Diameter: 2a a 3a a 4a a
Polytype: 4H
Resistivity(ICa ccm) N-Type 0.015i 0.028
SI a Y1A 105
Flatness(I m) TTV a 10 a 15 a 15
Bow a 25 a 35 a 45
Warp a 25 a 35 a 45
Thickness(I m) (350-380)A 25 according to customer requirements
Wafer Orientation on-aixs:(00001)A 0.5A
off-aixs:4A /2A toward A 0.5A
Primary flat A 0.5A
Secondary flat Si-face:90A cw.from orientation flatA 5A
Primary flat Length(mm) 16A 1.65 22A 3.17 32.5A 2.00
Secondary flat length(mm) 8A 1.65 11A 1.52 18A 2
Roughness(mm) a 0.3(10AumA 10Aum,AFM)
Micropipe Density(cm-2) Production Grade Research Grade Dummy Grade
a 10 a 10 a 10


Application:
luminescence of solid
Microwave Communication
Fiber-optic communication
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